Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
نویسندگان
چکیده
منابع مشابه
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical vapor deposition. High resolution infrared spectroscopy and temperature dependence measurements of photoluminescence intensity from Er ions in GaN under resonant excitation excitations were performed. Data provide a ...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2017
ISSN: 2045-2322
DOI: 10.1038/srep39997